INTERBAND SCATTERING EFFECTS ON SECONDARY IONIZATION COEFFICIENTS IN GAAS

被引：53

作者：

LAW, HD

LEE, CA

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 02期

关键词：

D O I：

10.1016/0038-1101(78)90262-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：331 / 340

页数：10

相关论文

共 32 条

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS
ANDERSON, CL
CROWELL, CR
[J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &
[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &
[3] BERENZ JJ, 1977, THESIS CORNELL U
[4] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GAAS
CHANG, YJ
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5392 - &
[5] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[6] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
COHEN, ML
BERGSTRESSER, TK
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
[7] ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS
CROWELL, CR
HOWARTH, LE
SPITZER, WG
LABATE, EE
[J]. PHYSICAL REVIEW, 1962, 127 (06): : 2006 - &
[8] FERMOR MH, 1966, COMMON METALS, V11, P376
[9] IONIZATION RATE IN GAAS DETERMINED FROM PHOTOMULTIPLICATION IN A SCHOTTKY-BARRIER
GLOVER, GH
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3253 - 3256
[10] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS
HALL, R
LECK, JH
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 529 - &

← 1 2 3 4 →