SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - COMMENT

被引:18
作者
CAPASSO, F [1 ]
PEARSALL, TP [1 ]
THORNBER, KK [1 ]
NAHORY, RE [1 ]
POLLACK, MA [1 ]
BACHELET, GB [1 ]
CHELIKOWSKY, JR [1 ]
机构
[1] EXXON RES & ENGN CO,LINDEN,NJ 07036
关键词
D O I
10.1063/1.330993
中图分类号
O59 [应用物理学];
学科分类号
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页码:3324 / 3326
页数:3
相关论文
共 21 条
[1]   THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].
ANDERSON, CL ;
CROWELL, CR .
PHYSICAL REVIEW B, 1972, 5 (06) :2267-&
[2]  
BARAFF G, 1962, PHYS REV, V123, P2507
[3]   QUANTUM TRANSPORT-THEORY OF HIGH-FIELD CONDUCTION IN SEMICONDUCTORS [J].
BARKER, JR .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (17) :2663-2684
[4]  
BARKER JR, 1980, PHYSICS NONLINEAR TR, P126
[5]   ORIENTATION DEPENDENCE OF NORMAL-TYPE GAAS INTRINSIC AVALANCHE RESPONSE-TIME [J].
BERENZ, JJ ;
KINOSHITA, J ;
HIERL, TL ;
LEE, CA .
ELECTRONICS LETTERS, 1979, 15 (05) :150-152
[6]   OBSERVATION OF ELECTRONIC BAND-STRUCTURE EFFECTS ON IMPACT IONIZATION BY TEMPERATURE TUNING [J].
CAPASSO, F ;
NAHORY, RE ;
POLLACK, MA ;
PEARSALL, TP .
PHYSICAL REVIEW LETTERS, 1977, 39 (11) :723-726
[7]   TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION RATES IN GAAS BETWEEN 20-DEGREES AND 200-DEGREES-C [J].
CAPASSO, F ;
NAHORY, RE ;
POLLACK, MA .
ELECTRONICS LETTERS, 1979, 15 (04) :117-118
[8]   HOT-ELECTRON DYNAMICS IN GAAS AVALANCHE DEVICES - COMPETITION BETWEEN BALLISTIC BEHAVIOR AND INTERVALLEY SCATTERING [J].
CAPASSO, F ;
NAHORY, RE ;
POLLACK, MA .
SOLID-STATE ELECTRONICS, 1979, 22 (11) :977-979
[9]  
Capasso F., 1980, International Electron Devices Meeting. Technical Digest, P633
[10]   THRESHOLD ENERGY FOR ELECTRON-HOLE PAIR-PRODUCTION BY ELECTRONS IN SILICON [J].
CHYNOWETH, AG ;
MCKAY, KG .
PHYSICAL REVIEW, 1957, 108 (01) :29-34