SHORT-PERIOD (ALAS)(GAAS) SUPERLATTICE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

BLOOD, P

FLETCHER, ED

FOXON, CT

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.99901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：299 / 301

页数：3

共 13 条

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KUCHARSKA, AI .

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[2]

CASEY HC, 1978, HETEROSTRUCTURE LA A

[3] EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

DAWSON, P ;

WOODBRIDGE, K .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1227-1229

[4] ULTRALOW-THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM-WELL BURIED HETEROSTRUCTURE (AL,GA)AS LASERS WITH HIGH REFLECTIVITY COATINGS [J].

DERRY, PL ;

YARIV, A ;

LAU, KY ;

BARCHAIM, N ;

LEE, K ;

ROSENBERG, J .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1773-1775

[5]

FLETCHER ED, UNPUB

[6] MBE GROWTH OF EXTREMELY HIGH-QUALITY GAAS-ALGAAS GRIN-SCH LASERS WITH A SUPERLATTICE BUFFER LAYER [J].

FUJII, T ;

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YAMAKOSHI, S ;

ISHIKAWA, T .

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[7] SILICON MIGRATION DURING MBE GROWTH OF DOPED (AL,GA)AS FILMS [J].

GONZALEZ, L ;

CLEGG, JB ;

HILTON, D ;

GOWERS, JP ;

FOXON, CT ;

JOYCE, BA .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (03) :237-241

[8] ALL-BINARY ALAS-GAAS LASER DIODE [J].

LAIDIG, WD ;

CALDWELL, PJ ;

KIM, K ;

LEE, JW .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :212-214

[9]

MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1958, DOI 10.1109/JQE.1985.1072606

[10] THRESHOLD CURRENT OF SINGLE QUANTUM-WELL LASERS - THE ROLE OF THE CONFINING LAYERS [J].

NAGLE, J ;

HERSEE, S ;

KRAKOWSKI, M ;

WEIL, T ;

WEISBUCH, C .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1325-1327

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