EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

[1] PHOTOEMISSION-STUDIES OF ALXGA1-XAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6518 - 6521

[2] DAWSON P, 1984, UNPUB 17TH INT C PHY

[3] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617

[4] IMPROVED ALXGA1-XAS BULK LASERS WITH SUPERLATTICE INTERFACES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 1 - 3

[5] Gossard A. C., 1982, Molecular Beam Epitaxy and Clean Surface Techniques. Collected Papers of 2nd International Symposium, P39

[6] USE OF A GAAS SMOOTHING LAYER TO IMPROVE THE HETEROINTERFACE OF GAAS/ALXGA1-XAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 563 - 565

[7] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8

[8] NEAVE JH, COMMUNICATION

[9] INTERFACIAL RECOMBINATION VELOCITY IN GAALAS-GAAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 761 - 763

[10] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6103 - 6108

[1] PHOTOEMISSION-STUDIES OF ALXGA1-XAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY [J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6518 - 6521

[2] DAWSON P, 1984, UNPUB 17TH INT C PHY

[3] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617

[4] IMPROVED ALXGA1-XAS BULK LASERS WITH SUPERLATTICE INTERFACES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 1 - 3

[5] Gossard A. C., 1982, Molecular Beam Epitaxy and Clean Surface Techniques. Collected Papers of 2nd International Symposium, P39

[6] USE OF A GAAS SMOOTHING LAYER TO IMPROVE THE HETEROINTERFACE OF GAAS/ALXGA1-XAS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 563 - 565

[7] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01): : 1 - 8

[8] NEAVE JH, COMMUNICATION

[9] INTERFACIAL RECOMBINATION VELOCITY IN GAALAS-GAAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 761 - 763

[10] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) : 6103 - 6108