PHOTOEMISSION-STUDIES OF ALXGA1-XAS(100) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY

被引：32

作者：

CHIANG, TC

LUDEKE, R

EASTMAN, DE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.25.6518

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6518 / 6521

页数：4

共 10 条

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[2] CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE
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[3] CORE-LEVEL SHIFT AT A JELLIUMLIKE SURFACE - A1(001)
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[4] CHIANG TC, UNPUB
[5] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE)
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284
[6] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[7] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
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EASTMAN, DE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[8] INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES
LUDEKE, R
LANDGREN, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 667 - 673
[9] ALLOY CLUSTERING IN GA1-XALXAS COMPOUND SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (03) : 170 - 173
[10] Wertheim G. K., 1978, Photoemission in Solids. I. General Principles, P197