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MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS
被引:287
作者
:
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
NELSON, RJ
SOBERS, RG
论文数:
0
引用数:
0
h-index:
0
SOBERS, RG
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1978年
/ 49卷
/ 12期
关键词
:
D O I
:
10.1063/1.324530
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:6103 / 6108
页数:6
相关论文
共 27 条
[1]
ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
ACKET, GA
NIJMAN, W
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
NIJMAN, W
LAM, HT
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
LAM, HT
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3033
-
3040
[2]
SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES
ASBECK, P
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
ASBECK, P
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(02)
: 820
-
822
[3]
PHOTON COUNTING APPARATUS FOR KINETIC AND SPECTRAL MEASUREMENTS
BACHRACH, RZ
论文数:
0
引用数:
0
h-index:
0
BACHRACH, RZ
[J].
REVIEW OF SCIENTIFIC INSTRUMENTS,
1972,
43
(05)
: 734
-
&
[4]
BEEB HB, 1972, SEMICONDUCTORS SEMIM, V8, P209
[5]
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[6]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
: 631
-
643
[7]
VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
CASEY, HC
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
MILLER, BI
PINKAS, E
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
PINKAS, E
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(03)
: 1281
-
1287
[8]
SPONTANEOUS AND STIMULATED CARRIER LIFETIME (77 DEGREES K) IN A HIGH-PURITY, SURFACE-FREE GAAS EPITAXIAL LAYER
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
KEUNE, DL
论文数:
0
引用数:
0
h-index:
0
KEUNE, DL
BURD, JW
论文数:
0
引用数:
0
h-index:
0
BURD, JW
LAWLEY, KL
论文数:
0
引用数:
0
h-index:
0
LAWLEY, KL
WALLINE, RE
论文数:
0
引用数:
0
h-index:
0
WALLINE, RE
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(10)
: 4194
-
+
[9]
DAPKUS PD, COMMUNICATION
[10]
SPONTANEOUS RADIATIVE RECOMBINATION IN SEMICONDUCTORS
DUMKE, WP
论文数:
0
引用数:
0
h-index:
0
DUMKE, WP
[J].
PHYSICAL REVIEW,
1957,
105
(01):
: 139
-
144
←
1
2
3
→
共 27 条
[1]
ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE
ACKET, GA
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
ACKET, GA
NIJMAN, W
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
NIJMAN, W
LAM, HT
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
PHILIPS RES LABS,EINDHOVEN,NETHERLANDS
LAM, HT
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3033
-
3040
[2]
SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES
ASBECK, P
论文数:
0
引用数:
0
h-index:
0
机构:
PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
PHILIPS LABS,BRIARCLIFF MANOR,NY 10510
ASBECK, P
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(02)
: 820
-
822
[3]
PHOTON COUNTING APPARATUS FOR KINETIC AND SPECTRAL MEASUREMENTS
BACHRACH, RZ
论文数:
0
引用数:
0
h-index:
0
BACHRACH, RZ
[J].
REVIEW OF SCIENTIFIC INSTRUMENTS,
1972,
43
(05)
: 734
-
&
[4]
BEEB HB, 1972, SEMICONDUCTORS SEMIM, V8, P209
[5]
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[6]
CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
CASEY, HC
STERN, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
STERN, F
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(02)
: 631
-
643
[7]
VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
CASEY, HC
MILLER, BI
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
MILLER, BI
PINKAS, E
论文数:
0
引用数:
0
h-index:
0
机构:
BELL LABS,MURRAY HILL,NJ 07974
BELL LABS,MURRAY HILL,NJ 07974
PINKAS, E
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(03)
: 1281
-
1287
[8]
SPONTANEOUS AND STIMULATED CARRIER LIFETIME (77 DEGREES K) IN A HIGH-PURITY, SURFACE-FREE GAAS EPITAXIAL LAYER
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
DAPKUS, PD
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
KEUNE, DL
论文数:
0
引用数:
0
h-index:
0
KEUNE, DL
BURD, JW
论文数:
0
引用数:
0
h-index:
0
BURD, JW
LAWLEY, KL
论文数:
0
引用数:
0
h-index:
0
LAWLEY, KL
WALLINE, RE
论文数:
0
引用数:
0
h-index:
0
WALLINE, RE
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(10)
: 4194
-
+
[9]
DAPKUS PD, COMMUNICATION
[10]
SPONTANEOUS RADIATIVE RECOMBINATION IN SEMICONDUCTORS
DUMKE, WP
论文数:
0
引用数:
0
h-index:
0
DUMKE, WP
[J].
PHYSICAL REVIEW,
1957,
105
(01):
: 139
-
144
←
1
2
3
→