SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES

被引：225

作者：

ASBECK, P ^{[1
]}

机构：

[1] PHILIPS LABS,BRIARCLIFF MANOR,NY 10510

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.323633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：820 / 822

页数：3

共 14 条

[1]

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CASEY, HC ;

SELL, DD ;

WECHT, KW .

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[3] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV [J].

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SELL, DD ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1974, 24 (02) :63-65

[4] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

[5] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

CASEY, HC ;

MILLER, BI ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287

[6]

DUMKE W, 1975, PHYS REV, V105, P139

[7] INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES [J].

ETTENBERG, M ;

KRESSEL, H .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1538-1544

[8] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME OF BAND-TO-BAND RECOMBINATION IN HEAVILY DOPED N-TYPE GAAS [J].

HWANG, CJ .

PHYSICAL REVIEW B, 1972, 6 (04) :1355-&

[9] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS - GE PREPARED BY LIQUID-PHASE EPITAXY [J].

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[10]

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