LONG WAVELENGTH (3-5-MU-M AND 8-12-MU-M) PHOTOLUMINESCENCE OF INAS1-XSBX GROWN ON (100) GAAS BY MOLECULAR-BEAM EPITAXY

被引：49

作者：

YEN, MY

PEOPLE, R

WECHT, KW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：952 / 955

页数：4

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共 6 条

[1] LONG WAVELENGTH INAS1-XSBX/GAAS DETECTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

BETHEA, CG ;

YEN, MY ;

LEVINE, BF ;

CHOI, KK ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1987, 51 (18) :1431-1432

[2] LUMINESCENCE FROM HGCDTE ALLOYS [J].

HUNTER, AT ;

MCGILL, TC .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5779-5785

[3] TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS [J].

VARSHNI, YP .

PHYSICA, 1967, 34 (01) :149-&

[4]

YEN MH, UNPUB

[5] LONG-WAVELENGTH PHOTOLUMINESCENCE OF INAS1-XSBX (0 LESS-THAN X LESS-THAN 1) GROWN BY MOLECULAR-BEAM EPITAXY ON (100) INAS [J].

YEN, MY ;

PEOPLE, R ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1988, 52 (06) :489-491

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES OF INAS1-XSBX IN 8-12 MU-M WAVELENGTH RANGE [J].

YEN, MY ;

LEVINE, BF ;

BETHEA, CG ;

CHOI, KK ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :927-929