TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS

被引：4818

作者：

VARSHNI, YP

机构：

来源：

PHYSICA | 1967年 / 34卷 / 01期

关键词：

D O I：

10.1016/0031-8914(67)90062-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：149 / &

共 18 条

[1] VASILEFF CALCULATION OF ELECTRONIC SELF-ENERGY IN SEMICONDUCTORS [J].

ADAMS, EN .

PHYSICAL REVIEW, 1957, 107 (03) :671-671

[2]

Antoncik E., 1955, Czech. J. Phys, V5, P449

[3] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[4] EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC [J].

CHOYKE, WJ ;

PATRICK, L .

PHYSICAL REVIEW, 1962, 127 (06) :1868-&

[5]

CLARK CD, 1964, P ROY SOC LONDON, VA277, P312

[6]

Collins J.G., 1964, Progress in Low Temperature Physics, V4, P450

[7] THE HEAT CAPACITY OF DIAMOND BETWEEN 12.8-DEGREES-K AND 277-DEGREES-K [J].

DESNOYERS, JE ;

MORRISON, JA .

PHILOSOPHICAL MAGAZINE, 1958, 3 (25) :42-48

[8] OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].

DIXON, JR ;

ELLIS, JM .

PHYSICAL REVIEW, 1961, 123 (05) :1560-&

[9] TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN MONATOMIC SEMICONDUCTORS [J].

FAN, HY .

PHYSICAL REVIEW, 1950, 78 (06) :808-809

[10] TEMPERATURE DEPENDENCE OF THE ENERGY GAP IN SEMICONDUCTORS [J].

FAN, HY .

PHYSICAL REVIEW, 1951, 82 (06) :900-905

← 1 2 →