Indirect band-gap tunnelling through a (100) GaAs/AlAs/GaAs heterostructure

被引：21

作者：

Marsh, A. C. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1986年 / 1卷 / 05期

关键词：

D O I：

10.1088/0268-1242/1/5/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The tunnelling transmission probability through a thin ( 100) GaAs/ AIAs/GaAs heterostructure is determined within a many-band pseudopotential model. Elastic inter-valley transfer between the Gamma(1) and X-1 valleys, without the emission of phonons, is shown to be a consequence of the model. It is demonstrated that a one-band effective-mass description of the tunnel junction is inadequate due to the significant role played by the X-1 minimum of the AlAs.

引用

页码：320 / 326

页数：7

共 32 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29
[2] TUNNELLING FROM A MANY-PARTICLE POINT OF VIEW
BARDEEN, J
[J]. PHYSICAL REVIEW LETTERS, 1961, 6 (02) : 57 - &
[3] SPACE-CHARGE EFFECTS ON ELECTRON TUNNELING
BENDANIEL, DJ
DUKE, CB
[J]. PHYSICAL REVIEW, 1966, 152 (02): : 683 - +
[4] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[5] BURT MG, 1975, UNPUB THEORETICAL ST
[6] CASEY HC, 1978, HETEROSTRUCTURE LA A
[7] COHEN ML, 1970, SOLID STATE PHYS, V24, P38
[8] ON THE ACCURACY OF THE EFFECTIVE MASS APPROXIMATION FOR ELECTRON-SCATTERING AT HETEROJUNCTIONS
COLLINS, S
LOWE, D
BARKER, JR
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (21): : L637 - L640
[9] COUCH NR, 1986, IN PRESS PHYS REV LE
[10] SIMULATION OF RESONANT-TUNNELING HETEROSTRUCTURE DEVICES
FRENSLEY, WR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1261 - 1266

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