Indirect band-gap tunnelling through a (100) GaAs/AlAs/GaAs heterostructure

被引：21

作者：

Marsh, A. C. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1986年 / 1卷 / 05期

关键词：

D O I：

10.1088/0268-1242/1/5/007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The tunnelling transmission probability through a thin ( 100) GaAs/ AIAs/GaAs heterostructure is determined within a many-band pseudopotential model. Elastic inter-valley transfer between the Gamma(1) and X-1 valleys, without the emission of phonons, is shown to be a consequence of the model. It is demonstrated that a one-band effective-mass description of the tunnel junction is inadequate due to the significant role played by the X-1 minimum of the AlAs.

引用

页码：320 / 326

页数：7

共 32 条

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