THEORETICAL TRENDS IN ABRUPT (110) ALAS-GAAS, GE-GAAS, AND GE-ZNSE INTERFACES

被引：29

作者：

PICKETT, WE

COHEN, ML

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1437 / 1443

页数：7

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