ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE

被引：47

作者：

BARAFF, GA ^{[1
]}

APPELBAUM, JA ^{[1
]}

HAMANN, DR ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.569411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：999 / 1005

页数：7

共 12 条

[1] THEORETICAL-STUDY OF GAAS (100) SURFACE
APPELBAUM, JA
BARAFF, GA
HAMANN, DR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 751 - 756
[2] SELF-CONSISTENT ELECTRONIC-STRUCTURE OF SOLID SURFACES
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 6 (06): : 2166 - +
[3] GAAS(100) - ITS SPECTRUM, EFFECTIVE CHARGE, AND RECONSTRUCTION PATTERNS
APPELBAUM, JA
BARAFF, GA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1623 - 1632
[4] SI (100) SURFACE - THEORETICAL-STUDY OF UNRECONSTRUCTED SURFACE
APPELBAUM, JA
BARAFF, GA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1975, 11 (10): : 3822 - 3831
[5] SURFACE-INDUCED CHARGE DISTURBANCES IN FILLED BANDS
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1974, 10 (12): : 4973 - 4979
[6] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (05) : 225 - 228
[7] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR
BARAFF, GA
APPELBAUM, JA
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 475 - +
[8] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES
DONNELLY, JP
MILNES, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +
[9] THE INTERFACE TRANSPORT PROPERTIES OF GE-GAAS HETEROJUNCTIONS
ESAKI, L
HOWARD, WE
HEER, J
[J]. SURFACE SCIENCE, 1964, 2 : 127 - 135
[10] PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES
FRENSLEY, WR
KROEMER, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 810 - 815

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