THE INTERFACE TRANSPORT PROPERTIES OF GE-GAAS HETEROJUNCTIONS

被引：26

作者：

ESAKI, L

HOWARD, WE

HEER, J

机构：

来源：

SURFACE SCIENCE | 1964年 / 2卷

关键词：

D O I：

10.1016/0039-6028(64)90051-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：127 / 135

页数：9

共 12 条

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[5]

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[6] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J].

ESAKI, L ;

HOWARD, WE ;

HEER, J .

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[7]

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[8] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[9] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

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[10]

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