CRITIQUE OF THE EMPIRICAL TIGHT-BINDING METHOD FOR SEMICONDUCTOR SURFACES AND INTERFACES

被引：19

作者：

PANTELIDES, ST ^{[1
]}

POLLMANN, J ^{[1
]}

机构：

[1] UNIV DORTMUND,INST PHYS,D-4600 DORTMUND 50,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1349 / 1358

页数：10

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