SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON

被引:232
作者
BERNHOLC, J
LIPARI, NO
PANTELIDES, ST
机构
关键词
D O I
10.1103/PhysRevLett.41.895
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:895 / 899
页数:5
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共 15 条
  • [1] BAND STRUCTURE AND IMPURITY STATES
    BASSANI, F
    IADONISI, G
    PREZIOSI, B
    [J]. PHYSICAL REVIEW, 1969, 186 (03): : 735 - &
  • [2] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
    BERNHOLC, J
    PANTELIDES, ST
    [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789
  • [3] CALLAWAY J, 1967, PHYS REV, V164, P1043, DOI 10.1103/PhysRev.164.1043
  • [4] THEORY OF SCATTERING IN SOLIDS
    CALLAWAY, J
    [J]. JOURNAL OF MATHEMATICAL PHYSICS, 1964, 5 (06) : 783 - &
  • [5] LOCALIZED DEFECTS IN SEMICONDUCTORS
    CALLAWAY, J
    HUGHES, AJ
    [J]. PHYSICAL REVIEW, 1967, 156 (03): : 860 - +
  • [6] CARTLING BG, 1975, J PHYS C SOLID STATE, V8, P3183, DOI 10.1088/0022-3719/8/19/018
  • [7] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS
    CHADI, DJ
    [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 790 - 796
  • [8] ELECTRONIC STATES OF SIMPLE-TRANSITION-METAL IMPURITIES IN SILICON
    HEMSTREET, LA
    [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 834 - 839
  • [9] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS
    JAROS, M
    BRAND, S
    [J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505
  • [10] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM
    KOHN, W
    [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320