A COMPUTATIONAL STUDY INTO THE ORIGIN OF SIC POLYTYPES

被引：27

作者：

HEINE, V ^{[1
]}

CHENG, C ^{[1
]}

NEEDS, RJ ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV, DEPT PHYS, TAINAN, TAIWAN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1992年 / 11卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(92)90190-K

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of a lengthy computational study into the origin of SiC polytypes are summarized. The 6H structure is found to be the stable phase at high temperature in agreement with experiment. The 4H is almost certainly the equilibrium phase at lower temperature, with 15R being stable over a surprisingly wide range in between. Other higher order polytypes are likely to be equilibrium phases around the phase boundaries of 15R with 6H and 4H respectively. The cubic structure is not stable at any temperature but its formation can be easily understood as a result of a local constrained equilibrium during crystal growth. The effects of donor and acceptor impurities are mentioned and two experiments are suggested to clarify the subject further.

引用

页码：55 / 60

页数：6

共 24 条

[1] ONE-DIMENSIONAL ISING-MODEL AND THE COMPLETE DEVILS STAIRCASE [J].