A THEORY OF THE ORIGIN OF SILICON-CARBIDE POLYTYPES

被引：13

作者：

CHENG, C

NEEDS, RJ

HEINE, V

JONES, IL

机构：

来源：

PHASE TRANSITIONS | 1989年 / 16卷

关键词：

D O I：

10.1080/01411598908245702

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：263 / 274

页数：12

共 23 条

[1] ISING-MODEL WITH SOLITONS, PHASONS, AND THE DEVILS STAIRCASE [J].

BAK, P ;

VONBOEHM, J .

PHYSICAL REVIEW B, 1980, 21 (11) :5297-5308

[2] ONE-DIMENSIONAL ISING-MODEL AND THE COMPLETE DEVILS STAIRCASE [J].

BAK, P ;

BRUINSMA, R .

PHYSICAL REVIEW LETTERS, 1982, 49 (04) :249-251

[3] DEVILS STAIRS AND THE COMMENSURATE-COMMENSURATE TRANSITIONS IN CESB [J].

BOEHM, JV ;

BAK, P .

PHYSICAL REVIEW LETTERS, 1979, 42 (02) :122-125

[4] CONFIRMATION OF AN ANNNI-LIKE MODEL FOR POLYTYPISM IN SIC [J].

CHENG, C ;

NEEDS, RJ ;

HEINE, V ;

CHURCHER, N .

EUROPHYSICS LETTERS, 1987, 3 (04) :475-479

[5] INTER-LAYER INTERACTIONS AND THE ORIGIN OF SIC POLYTYPES [J].

CHENG, C ;

NEEDS, RJ ;

HEINE, V .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (06) :1049-1063

[6]

CHENG C, 1988, UNPUB PHYS REV B

[7]

CHENG C, 1989, IN PRESS

[8] THEORETICAL-STUDY OF STACKING-FAULTS IN SILICON [J].

CHOU, MY ;

COHEN, ML ;

LOUIE, SG .

PHYSICAL REVIEW B, 1985, 32 (12) :7979-7987

[9] GROUND-STATE PROPERTIES OF THE GROUP-IV IONIC COMPOUND SILICON-CARBIDE [J].

CHURCHER, N ;

KUNC, K ;

HEINE, V .

SOLID STATE COMMUNICATIONS, 1985, 56 (02) :177-180

[10] CALCULATED GROUND-STATE PROPERTIES OF SILICON-CARBIDE [J].

CHURCHER, N ;

KUNC, K ;

HEINE, V .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (23) :4413-4426

← 1 2 3 →