THEORETICAL-STUDY OF STACKING-FAULTS IN SILICON

被引：114

作者：

CHOU, MY ^{[1
]}

COHEN, ML ^{[1
]}

LOUIE, SG ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.32.7979

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7979 / 7987

页数：9

共 36 条

[1] A VALENCE FORCE-FIELD FOR THE SILICON CRYSTAL [J].

ALTMANN, SL ;

LAPICCIRELLA, A ;

LODGE, KW ;

TOMASSINI, N .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (27) :5581-5591

[2]

BREWER L, UNPUB

[3] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].

CEPERLEY, DM ;

ALDER, BJ .

PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569

[4] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082

[5] ELECTRONIC-STRUCTURE OF SILICON [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1974, 10 (12) :5095-5107

[6] PSEUDOPOTENTIAL CALCULATION OF STACKING-FAULT ENERGY IN SILICON [J].

CHEN, LJ ;

FALICOV, LM .

PHILOSOPHICAL MAGAZINE, 1974, 29 (01) :1-8

[7] PSEUDOPOTENTIALS AND TOTAL ENERGY CALCULATIONS [J].

COHEN, ML .

PHYSICA SCRIPTA, 1982, T1 :5-10

[8] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATIONS OF EXTENDED AND UNEXTENDED DISLOCATION NODES IN SI AND GE/SI LAYERS USING WEAK-BEAM TECHNIQUE [J].

CULLIS, AG .

JOURNAL OF MICROSCOPY-OXFORD, 1973, 98 (JUL) :191-195

[9]

Donohue J, 1974, STRUCTURES ELEMENTS

[10] Forces in molecules [J].

Feynman, RP .

PHYSICAL REVIEW, 1939, 56 (04) :340-343

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