ELECTRONIC-STRUCTURE OF SILICON

被引：290

作者：

CHELIKOWSKY, JR

COHEN, ML

机构：

[1] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720

[2] LAWRENCE BERKELEY LAB,INORG MAT RES DIV,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1974年 / 10卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.10.5095

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：5095 / 5107

页数：13

相关论文

共 73 条

[1] MODEL POTENTIAL FOR POSITIVE IONS
ABARENKOV, IV
HEINE, V
[J]. PHILOSOPHICAL MAGAZINE, 1965, 12 (117) : 529 - +
[2] ELECTRON-DISTRIBUTION IN SILICON .2. THEORETICAL INTERPRETATION
ALDRED, PJE
HART, M
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) : 239 - 254
[3] ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT
ALDRED, PJE
HART, M
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) : 223 - +
[4] SCREENED MODEL POTENTIAL FOR 25 ELEMENTS
ANIMALU, AOE
HEINE, V
[J]. PHILOSOPHICAL MAGAZINE, 1965, 12 (120): : 1249 - &
[5] ANIMALU AOE, UNPUBLISHED
[6] SELF-CONSISTENT PSEUDOPOTENTIAL FOR SI
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1973, 8 (04) : 1777 - 1780
[7] SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION
APPELBAUM, JA
HAMANN, DR
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (05) : 225 - 228
[8] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE
ASPNES, DE
[J]. SURFACE SCIENCE, 1973, 37 (01) : 418 - 442
[9] DIRECT OBSERVATION OF E0 AND E0 + DELTA0 TRANSITIONS IN SILICON
ASPNES, DE
STUDNA, AA
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (10) : 1375 - &
[10] MEAN-VALUE POINT IN BRILLOUIN ZONE
BALDERESCHI, A
[J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5212 - 5215

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