EFFECTS OF SYNTHESIS CONDITIONS ON EXISTENCE AND NONEXISTENCE OF THE ARF EXCIMER-LASER AND X-RAY-INDUCED B-2-ALPHA BAND IN TYPE-III FUSED SILICAS

被引：23

作者：

KUZUU, N ^{[1
]}

MURAHARA, M ^{[1
]}

机构：

[1] TOKAI UNIV,FAC ENGN,DEPT ELECT ENGN,HIRATSUKA,KANAGAWA 25912,JAPAN

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.52.3241

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ArF excimer laser and x-ray induced absorption bands in type-III fused silica synthesized under reducing (sample DR) and oxidizing (sample DO) conditions were investigated. Under ArF excimer laser and x-ray irradiation, an absorption band at 5.0 eV called the B-2 alpha band and ascribed to an unrelaxed oxygen-deficient center was observed only in the sample DR and was not observed in the sample DO. Emission bands at 4.4 and 2.7 eV induced by exciting the B-2 alpha band only appeared in the sample DR. The creation mechanism of the B-2 alpha band in the sample DR and the reason for the nonexistence of the B-2 alpha band in the sample DO were discussed.

引用

页码：3241 / 3247

页数：7

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