X-RAY-INDUCED ABSORPTION-BANDS IN TYPE-III FUSED SILICAS

被引：6

作者：

KUZUU, N ^{[1
]}

MURAHARA, M ^{[1
]}

机构：

[1] TOKAI UNIV,FAC ENGN,DEPT ELECT ENGN,HIRATSUKA,KANAGAWA 25917,JAPAN

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 22期

关键词：

D O I：

10.1103/PhysRevB.46.14486

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

X-ray-induced absorption bands in type-III fused silicas synthesized under reducing (DR) and oxidizing (DO) conditions are investigated. In sample DR, an absorption band at 5.8 eV ascribed to the E' center (=Si.) was induced. Photoluminescence and photoluminescence-excitation spectra suggest that the absorption band at 5.0 eV (the B2alpha band) is caused by oxygen-deficient center (=Si ... Si= ). In sample DO, absorption bands at 5.8, 4.8, and 2.0 eV are observed. We discuss the formation mechanism of these bands based on models proposed before.

引用

页码：14486 / 14492

页数：7

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