ALKYL EXCHANGE EFFECTS BETWEEN TRIETHYLINDIUM AND TRIMETHYLGALLIUM

[1] A MASS-SPECTROMETRIC STUDY OF THE REACTION OF TRIETHYLINDIUM WITH ARSINE GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (06) : 1530 - 1534

[2] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687

[3] COATES GE, 1977, PRINCIPLES ORGANOMET, P38

[4] LO TL, 1977, HARD SOFT ACIDS BASE, pCH2

[5] MAHER JP, 1961, P CHEM SOC LONDON, P208

[6] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 135 - 137

[7] THE PYROLYSIS TEMPERATURE OF TRIETHYLGALLIUM IN THE PRESENCE OF ARSINE OR TRIMETHYLALUMINUM [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 194 - 199

[8] Matsushima Y., 1982, GaInAsP alloy semiconductors, P413

[9] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 371 - 395

[10] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587

[1] A MASS-SPECTROMETRIC STUDY OF THE REACTION OF TRIETHYLINDIUM WITH ARSINE GAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (06) : 1530 - 1534

[2] GROWTH AND PROPERTIES OF HETEROEPITAXIAL GALNAS ALLOYS ON GAAS SUBSTRATES USING TRIMETHYLGALLIUM, TRIETHYLINDIUM, AND ARSINE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 683 - 687

[3] COATES GE, 1977, PRINCIPLES ORGANOMET, P38

[4] LO TL, 1977, HARD SOFT ACIDS BASE, pCH2

[5] MAHER JP, 1961, P CHEM SOC LONDON, P208

[6] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 135 - 137

[7] THE PYROLYSIS TEMPERATURE OF TRIETHYLGALLIUM IN THE PRESENCE OF ARSINE OR TRIMETHYLALUMINUM [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 194 - 199

[8] Matsushima Y., 1982, GaInAsP alloy semiconductors, P413

[9] LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP AND RELATED-COMPOUNDS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 371 - 395

[10] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 585 - 587