ELECTRON-DRIFT MOBILITY IN A-SI-H UNDER EXTREMELY HIGH ELECTRIC-FIELD

被引：28

作者：

JUSKA, G ^{[1
]}

KOCKA, J ^{[1
]}

ARLAUSKAS, K ^{[1
]}

JUKONIS, G ^{[1
]}

机构：

[1] INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 75卷 / 06期

关键词：

D O I：

10.1016/0038-1098(90)90492-T

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron drift mobility in a-Si : H is studied in a broad range of temperatures (140-295 K) as a function of electric field up to its extremely high values (F ≈4 × 105V cm-1) on a-Si : H samples with the thickness (d) ranging from 1.7 to 18 μm. The observed clear increase of electron drift mobility (independent of sample thickness) and accompanying decrease of mobility activation energy for electric field F ≥ 1 × 105V cm-1 cannot be explained only on the basis of the model of dispersive transport in this region of electric fields. © 1990.

引用

页码：531 / 533

页数：3

共 7 条

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[6] TAIL-STATE DISTRIBUTION AND TRAPPING PROBABILITY IN A-SI-H INVESTIGATED BY TIME-OF-FLIGHT EXPERIMENTS AND COMPUTER-SIMULATIONS
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[7] SPEAR WE, 1989, AMORPHOUS SILICON RE, P721

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