STUDY OF A-SI-H DRIFT MOBILITY IN SUBNANOSECOND TIME SCALE

被引：22

作者：

JUSKA, G ^{[1
]}

JUKONIS, G ^{[1
]}

KOCKA, J ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA

来源：

关键词：

D O I：

10.1016/0022-3093(89)90161-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：354 / 356

页数：3

共 6 条

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[2] IMPACT IONIZATION AND MOBILITIES OF CHARGE-CARRIERS AT HIGH ELECTRIC-FIELDS IN AMORPHOUS SELENIUM
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[3] JUSKA G, 1989, LIET FIZ RIUKIUYS, V29, P599
[4] DEEP-TRAPPING KINEMATICS
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[5] ELECTRON-DRIFT MOBILITY IN AMORPHOUS SI-H
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STREET, RA
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01): : 51 - 60
[6] SPEAR WE, 1989, AMORPHOUS SILICON RE, P721