PICOSECOND TRANSIENT PHOTOCURRENTS IN AMORPHOUS-SILICON

被引：52

作者：

JOHNSON, AM ^{[1
]}

AUSTON, DH ^{[1
]}

SMITH, PR ^{[1
]}

BEAN, JC ^{[1
]}

HARBISON, JP ^{[1
]}

ADAMS, AC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.23.6816

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6816 / 6819

页数：4

共 16 条

[1] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].

AUSTON, DH ;

JOHNSON, AM ;

SMITH, PR ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :371-373

[2] AMORPHOUS-SILICON PHOTODETECTOR FOR PICOSECOND PULSES [J].

AUSTON, DH ;

LAVALLARD, P ;

SOL, N ;

KAPLAN, D .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :66-68

[3] SMALL-ANGLE-SCATTERING EVIDENCE OF VOIDS IN HYDROGENATED AMORPHOUS SILICON [J].

DANTONIO, P ;

KONNERT, JH .

PHYSICAL REVIEW LETTERS, 1979, 43 (16) :1161-1163

[4] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

HVAM, JM ;

BRODSKY, MH .

PHYSICAL REVIEW LETTERS, 1981, 46 (05) :371-374

[5]

Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[6] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].

LECOMBER, PG ;

SPEAR, WE .

PHYSICAL REVIEW LETTERS, 1970, 25 (08) :509-&

[7]

Loveland R. J., 1973, Journal of Non-Crystalline Solids, V13, P55, DOI 10.1016/0022-3093(73)90035-5

[8] GEMINATE RECOMBINATION IN ALPHA-SI - H [J].

MORT, J ;

TROUP, A ;

MORGAN, M ;

GRAMMATICA, S ;

KNIGHTS, JC ;

LUJAN, R .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :277-279

[9]

Mott N. F., 1979, ELECT PROCESSES NONC

[10] DISPERSIVE (NON-GAUSSIAN) TRANSIENT TRANSPORT IN DISORDERED SOLIDS [J].

PFISTER, G ;

SCHER, H .

ADVANCES IN PHYSICS, 1978, 27 (05) :747-798

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