PICOSECOND TRANSIENT PHOTOCURRENTS IN AMORPHOUS-SILICON

被引：52

作者：

JOHNSON, AM ^{[1
]}

AUSTON, DH ^{[1
]}

SMITH, PR ^{[1
]}

BEAN, JC ^{[1
]}

HARBISON, JP ^{[1
]}

ADAMS, AC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.23.6816

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6816 / 6819

页数：4

共 16 条

[11]

POSTOL TA, 1980, PHYS REV LETT, V45, P648, DOI 10.1103/PhysRevLett.45.648

[12] PICOSECOND PHOTOCONDUCTIVITY IN RADIATION-DAMAGED SILICON-ON-SAPPHIRE FILMS [J].

SMITH, PR ;

AUSTON, DH ;

JOHNSON, AM ;

AUGUSTYNIAK, WM .

APPLIED PHYSICS LETTERS, 1981, 38 (01) :47-50

[13] SPACE-CHARGE-LIMITED CURRENTS IN SINGLE CRYSTALS OF CADMIUM SULFIDE [J].

SMITH, RW ;

ROSE, A .

PHYSICAL REVIEW, 1955, 97 (06) :1531-1537

[14] TEMPERATURE-DEPENDENCE OF PHOTOCONDUCTIVITY IN A-SI [J].

SPEAR, WE ;

LOVELAND, RJ ;

ALSHARBA.A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (03) :410-422

[15] ELECTRON-DRIFT MOBILITY IN HYDROGENATED A-SI [J].

TIEDJE, T ;

ABELES, B ;

MOREL, DL ;

MOUSTAKAS, TD ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :695-697

[16]

VARDENY ZV, COMMUNICATION

← 1 2 →