A QUANTITATIVE MODEL OF POINT-DEFECT DIFFUSIVITY AND RECOMBINATION IN ION-BEAM DEPOSITION AND COMBINED ION AND MOLECULAR DEPOSITION

We are investigating the use of low energy ions (< 1 keV) in low temperature thin film growth techniques, ion beam deposition (IBD) and combined ion and molecular deposition (CIMD). In IBD, a thin film is directly grown from a low energy ion beam as the only source of material, while in CIMD, low temperature growth of thin films is achieved by depositing materials simultaneously from a low energy ion beam and one or several molecular beams. A simple model of the IBD process has been developed and accounts for atomic collisions and thermal diffusion during thin film growth. Computer simulation of IBD of Si on Si have been conducted as a function of ion energy to support more quantitatively this physical description of IBD. The results show that the IBD growth mechanism is mediated by the fast diffusing interstitials and establish a low energy limit to achieve epitaxial growth by IBD that depends on the point defect diffusivities. The defect generation has to be confined in the subsurface region in order to favor interstitial recombination with the surface, leading to net thin film growth, and vacancy annihilation to prevent amorphization. The effect of point defect diffusivities on the IBD growth process is also investigated. It is found that a model including fast moving interstitials can account for various experimental observations specific to IBD.