GERMANIUM AND SILICON ION-BEAM DEPOSITION

被引:30
作者
MIYAKE, K
TOKUYAMA, T
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D O I
10.1016/0040-6090(82)90194-8
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:123 / 129
页数:7
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