IONIZED-CLUSTER BEAM DEPOSITION AND EPITAXY AS FABRICATION TECHNIQUES FOR ELECTRON DEVICES

被引：30

作者：

TAKAGI, T ^{[1
]}

YAMADA, I ^{[1
]}

SASAKI, A ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN

来源：

关键词：

D O I：

10.1016/0040-6090(77)90248-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：569 / 576

页数：8

共 11 条

[1] ISHIDA I, 1976, THIN SOLID FILMS, V39, P227
[2] IONIZED-CLUSTER BEAM DEPOSITION
TAKAGI, T
YAMADA, I
SASAKI, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1128 - 1134
[3] EVALUATION OF METAL AND SEMICONDUCTOR-FILMS FORMED BY IONIZED-CLUSTER BEAM DEPOSITION
TAKAGI, T
YAMADA, I
SASAKI, A
[J]. THIN SOLID FILMS, 1976, 39 (DEC) : 207 - 217
[4] TAKAGI T, 1974, JPN J APPL PHYS, P427
[5] TAKAGI T, 1974, 2ND P S ION SOURCES
[6] TAKAGI T, 1977, JUN C ION PLAT ALL T
[7] TAKAGI T, 1977, 6TH INT S MOL BEAMS, P53
[8] TAKAGI T, 1973, IEEE T ELECTRON DEV, V10, P1110
[9] TAKAGI T, 1972, 2ND P INT C ION SOUR, P790
[10] THEETEN JB, TO BE PUBLISHED