ION CLUSTER BEAM DEPOSITION OF SILVER AND GERMANIUM ON SILICON

被引：40

作者：

KUIPER, AET

THOMAS, GE

SCHOUTEN, WJ

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(81)90005-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：17 / 40

页数：24

共 51 条

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS
ADAMSKY, RF
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &
[2] THIN-FILM DEPOSITION USING LOW-ENERGY ION-BEAMS .2. PB+ ION-BEAM DEPOSITION AND ANALYSIS OF DEPOSITS
AMANO, J
LAWSON, RPW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (03): : 831 - 835
[3] AMANO J, 1977, J VAC SCI TECHNOL, V14, P836, DOI 10.1116/1.569281
[4] VELOCITY DISTRIBUTIONS IN MOLECULAR BEAMS FROM NOZZLE SOURCES
ANDERSON, JB
FENN, JB
[J]. PHYSICS OF FLUIDS, 1965, 8 (05) : 780 - &
[5] ANDERSON JB, 1966, ADV CHEM PHYS, V10, P275
[6] INVESTIGATION OF GERMANIUM FILMS AND GE-SI INTERFACE STRUCTURE BY TRANSMISSION ELECTRON-MICROSCOPY
ASEEV, AL
VASIN, OI
STENIN, SI
SOLDATENKO, NN
TKHORIK, YA
[J]. THIN SOLID FILMS, 1975, 30 (01) : 73 - 82
[7] NECESSARY CONDITIONS FOR GENERATING INTENSE CLUSTER BEAM
BE, SH
YANO, K
ENJOJI, H
OKAMOTO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) : 1049 - 1056
[8] STRAHLEN AUS KONDENSIERTEN ATOMEN UND MOLEKELN IM HOCHVAKUUM
BECKER, EW
BIER, K
HENKES, W
[J]. ZEITSCHRIFT FUR PHYSIK, 1956, 146 (03): : 333 - 338
[9] BECKER EW, 1960, Z NATURFORSCH A, V15, P645
[10] BIER K, 1966, ADV APPL PHYS S3, V2, P260