THIN-FILM DEPOSITION USING LOW-ENERGY ION-BEAMS .2. PB+ ION-BEAM DEPOSITION AND ANALYSIS OF DEPOSITS

被引：22

作者：

AMANO, J ^{[1
]}

LAWSON, RPW ^{[1
]}

机构：

[1] UNIV ALBERTA,DEPT ELECT ENGN,EDMONTON,ALBERTA,CANADA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.569280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：831 / 835

页数：5

共 11 条

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[8] OBSERVATION OF FILM GROWTH PROCESS BY MEANS OF BACKSCATTERING TECHNIQUE
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[J]. APPLIED PHYSICS LETTERS, 1972, 20 (07) : 259 - &
[9] INVESTIGATION OF STOICHIOMETRY AND IMPURITY CONTENT OF THIN SILICON OXIDE-FILMS USING RUTHERFORD SCATTERING OF MEV ALPHA-PARTICLES
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[10] SANDERS JV, 1971, CHEMISORPTION REACTI