INVESTIGATION OF STOICHIOMETRY AND IMPURITY CONTENT OF THIN SILICON OXIDE-FILMS USING RUTHERFORD SCATTERING OF MEV ALPHA-PARTICLES

被引：17

作者：

MORGAN, DV

GITTINS, RP

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 13卷 / 02期

关键词：

D O I：

10.1002/pssa.2210130221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：517 / &

共 22 条

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