INVESTIGATION OF ION-IMPLANTED CRYSTALS BY MEANS OF DIRECTIONAL EFFECTS IN CHARGED PARTICLE REACTION YIELDS

被引：24

作者：

BOGH, E

机构：

来源：

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES | 1969年 / 311卷 / 1504期

关键词：

D O I：

10.1098/rspa.1969.0097

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：35 / &

共 11 条

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[2] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING
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[3] RUTHERFORD SCATTERING OF PROTONS IN SURFACE LAYERS OF A TUNGSTEN SINGLE CRYSTAL
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[5] BROWN AB, 1951, PHYS REV, V82, P177
[6] OBSERVATION OF MOSSBAUER EFFECT FOLLOWING COULOMB EXCITATION OF 73GE
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[J]. PHYSICS LETTERS, 1966, 19 (08): : 673 - +
[7] CHANNELING OF MEV PROJECTILES IN TUNGSTEN AND SILICON
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[8] GLOTIN P, 1967, INT C APPL ION BE ED
[9] MOSSBAUER EFFECT FROM COULOMB-EXCITED LEVELS IN FE57
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WALKER, JC
[J]. PHYSICAL REVIEW LETTERS, 1965, 14 (23) : 957 - &
[10] LINDHARD J, 1965, MAT FYS MEDDR, V34