ELECTRICAL PHENOMENA IN AMORPHOUS OXIDE FILMS

被引：616

作者：

DEARNALEY, G

STONEHAM, AM

MORGAN, DV

机构：

来源：

关键词：

D O I：

10.1088/0034-4885/33/3/306

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1129 / +

页数：1

共 158 条

[1] INITIATION OF ELECTRICAL BREAKDOWN IN ULTRAHIGH VACUUM
ALPERT, D
LEE, DA
TOMASCHKE, H
LYMAN, EM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1964, 1 (02): : 35 - &
[2] ANDREWS PT, 1962, P S NUCL INSTR, P93
[3] SWITCHING PHENOMENA IN TITANIUM OXIDE THIN FILMS
ARGALL, F
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (05) : 535 - &
[4] ELECTRICAL PROPERTIES OF AL-AL203-METAL STRUCTURES
BARRIAC, C
PINARD, P
DAVOINE, F
[J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : 621 - &
[5] BARRIAC C, 1966, CR ACAD SCI B PHYS, V262, P900
[6] BARRIAC C, 1968, CR ACAD SCI B PHYS, V266, P423
[7] FURTHER PROPERTIES + SUGGESTED MODEL FOR NIOBIUM OXIDE NEGATIVE RESISTANCE
BEAM, WR
ARMSTRONG, AL
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (03) : 300 - &
[8] CONDUCTION MECHANISM OF SELF-COMPENSATED-HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .I. AMBIPOLAR CONDUCTIVITY
BOER, KW
[J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : 721 - &
[9] BOER KW, 1970, J APPL PHYS, V41, P2675, DOI 10.1063/1.1659281
[10] CONDUCTION MECHANISM OF HIGHLY DISORDERED SEMICONDUCTORS (A POSSIBLE MODEL FOR SEMICONDUCTING GLASSES) .2. INFLUENCE OF CHARGED DEFECTS
BOER, KW
[J]. PHYSICA STATUS SOLIDI, 1969, 34 (02): : 733 - &