ANOMALIES OF HOPPING CONDUCTION AND DIELECTRIC-DISPERSION OF BI2-XMXWO6 (M = LA, TL)

被引:3
作者
HIROSE, T [1 ]
KAWAMINAMI, M [1 ]
OBARA, K [1 ]
机构
[1] KAGOSHIMA UNIV,FAC ENGN,KAGOSHIMA 890,JAPAN
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 127卷 / 02期
关键词
D O I
10.1002/pssa.2211270231
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dielectric constant epsilon'(omega, T) and the electric conductivity sigma(omega, T) of Bi2-xMxWO6 (M = La, Tl) single crystals are measured in the temperature range from 350 to 4.2 K and at frequencies from 20 Hz to 1 MHz and 9.3 GHz. Anomalies of the dielectric constant and the electric conductivity along the layer axis (b-axis) are observed in the temperature range from -30 to 30-degrees-C. These anomalies correspond to a first order phase transition related with the hopping mechanism of the impurity conduction and with the phonon. A new anomaly of epsilon'b in Bi2-xTlxWO6 single crystals is observed at 61.3 K.
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页码:541 / 553
页数:13
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