ELECTRONIC-STRUCTURE OF DELTA-DOPED QUANTUM-WELLS

被引：16

作者：

KE, ML

HAMILTON, B

机构：

[1] Department of Pure and Applied Physics, University of Manchester, Institute of Science and Technology

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4790

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present self-consistent calculations of the electronic structure of delta-doped quantum wells. The sensitivity of the energy levels to various parameters-including impurity concentration, impurity spread, well width, and temperature-is examined. The effect of the finite barrier thickness is also considered, in order to ascertain the degree of carrier transfer into the surrounding material as a function of well width, barrier thickness, and impurity concentration.

引用

收藏

页码：4790 / 4793

页数：4

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