ELECTRON-ENERGY LEVELS IN A DELTA-DOPED LAYER IN GAAS

被引：92

作者：

DEGANI, MH ^{[1
]}

机构：

[1] UNIV ILLINOIS, BECKMAN INST ADV SCI & TECHNOL, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.44.5580

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Calculated results for energy levels of electrons in a Si delta-doped layer in GaAs are presented at T = 0 K and ambient temperature. Their sensitivity to the donor distribution is examined. The many-body exchange-correlation effects are taken into account in the local-density-functional approximation.

引用

页码：5580 / 5584

页数：5

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