MANY-BODY CORRELATION-EFFECTS ON THE (110) AND (111) SILICON INVERSION-LAYERS

被引:22
作者
DASSARMA, S
VINTER, B
机构
[1] TECH UNIV MUNICH,D-8000 MUNICH 2,FED REP GER
[2] THOMSON CSF,F-91401 ORSAY,FRANCE
来源
PHYSICAL REVIEW B | 1983年 / 28卷 / 06期
关键词
D O I
10.1103/PhysRevB.28.3639
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3639 / 3642
页数:4
相关论文
共 22 条
[1]   INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J].
ANDO, T .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03) :263-272
[2]   INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER [J].
BLOSS, WL ;
SHAM, LJ ;
VINTER, V .
PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1529-1532
[3]   EXCHANGE-CORRELATION EFFECTS IN SILICON (111) INVERSION-LAYERS - STRAIN-ENHANCED VALLEY-OCCUPANCY PHASE-TRANSITION [J].
BLOSS, WL ;
YING, SC ;
QUINN, JJ .
PHYSICAL REVIEW B, 1981, 23 (04) :1839-1842
[4]  
CLAESSEN U, 1981, THESIS TU MUNICH
[6]  
Cole T., 1980, Journal of the Physical Society of Japan, V49, P959
[7]   ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACE INVERSION-LAYERS AT FINITE TEMPERATURE - THE SI(100)-SIO2 SYSTEM [J].
DASSARMA, S ;
VINTER, B .
PHYSICAL REVIEW B, 1982, 26 (02) :960-974
[8]   TEMPERATURE-DEPENDENCE OF MANY-BODY EFFECTS IN SI ACCUMULATION LAYERS - EXPERIMENTAL-OBSERVATION [J].
KAMGAR, A .
SOLID STATE COMMUNICATIONS, 1979, 29 (10) :719-722
[9]   ELECTRONIC-STRUCTURE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].
KELLY, MJ ;
FALICOV, LM .
PHYSICAL REVIEW LETTERS, 1976, 37 (15) :1021-1024
[10]   OPTICAL-SPECTRUM OF INTER-SUBBAND TRANSITION IN N-SI (111) MOS CHARGE LAYER [J].
NAKAYAMA, M .
SURFACE SCIENCE, 1978, 73 (01) :510-517