OPTICAL-SPECTRUM OF INTER-SUBBAND TRANSITION IN N-SI (111) MOS CHARGE LAYER

被引：11

作者：

NAKAYAMA, M ^{[1
]}

机构：

[1] UNIV PENN,DEPT PHYS,PHILADELPHIA,PA 19104

来源：

SURFACE SCIENCE | 1978年 / 73卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90533-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：510 / 517

页数：8

共 19 条

[1] ABSORPTION OF INFRARED RADIATION BY ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS [J].

ALLEN, SJ ;

TSUI, DC ;

VINTER, B .

SOLID STATE COMMUNICATIONS, 1976, 20 (04) :425-428

[2] INTER-SUBBAND OPTICAL-TRANSITIONS IN A SURFACE SPACE-CHARGE LAYER [J].

ANDO, T .

SOLID STATE COMMUNICATIONS, 1977, 21 (01) :133-136

[3] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J].

ANDO, T .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03) :263-272

[4]

ANDO T, UNPUBLISHED

[5] INTERFACE EM MODES OF A SURFACE QUANTIZED PLASMA-LAYER ON A SEMICONDUCTOR SURFACE [J].

CHEN, WP ;

CHEN, YJ ;

BURSTEIN, E .

SURFACE SCIENCE, 1976, 58 (01) :263-265

[6] VALLEY DEGENERACY AND MOBILITY ANISOTROPY UNDER MECHANICAL-STRESS ON (111) SILICON INVERSION LAYERS [J].

DORDA, G ;

GESCH, H ;

EISELE, I .

SOLID STATE COMMUNICATIONS, 1976, 20 (04) :429-432

[7]

DORDA G, UNPUBLISHED

[8]

KAMGAR A, COMMUNICATION

[9] ELECTRONIC GROUND-STATE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW B, 1977, 15 (04) :1974-1982

[10] ELECTRONIC-STRUCTURE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS [J].

KELLY, MJ ;

FALICOV, LM .

PHYSICAL REVIEW LETTERS, 1976, 37 (15) :1021-1024

← 1 2 →