ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACE INVERSION-LAYERS AT FINITE TEMPERATURE - THE SI(100)-SIO2 SYSTEM

被引：35

作者：

DASSARMA, S ^{[1
]}

VINTER, B ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT PHYS & ASTRON,COLLEGE PK,MD 20742

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.26.960

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：960 / 974

页数：15

共 55 条

[1] ABSORPTION OF INFRARED RADIATION BY ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS
ALLEN, SJ
TSUI, DC
VINTER, B
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (04) : 425 - 428
[2] ELECTRON-ELECTRON INTERACTION AND ELECTRONIC PROPERTIES OF SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES
ANDO, T
[J]. SURFACE SCIENCE, 1978, 73 (01) : 1 - 18
[3] INTER-SUBBAND OPTICAL-ABSORPTION IN SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES
ANDO, T
[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1977, 26 (03): : 263 - 272
[4] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS
ANDO, T
[J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3468 - 3477
[5] INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER
BLOSS, WL
SHAM, LJ
VINTER, V
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (20) : 1529 - 1532
[6] INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER
BLOSS, WL
SHAM, LJ
VINTER, B
[J]. SURFACE SCIENCE, 1980, 98 (1-3) : 250 - 255
[7] INTERFACE EM MODES OF A SURFACE QUANTIZED PLASMA-LAYER ON A SEMICONDUCTOR SURFACE
CHEN, WP
CHEN, YJ
BURSTEIN, E
[J]. SURFACE SCIENCE, 1976, 58 (01) : 263 - 265
[8] MAGNETOCONDUCTANCE STUDIES ON INP SURFACES
CHENG, HC
KOCH, F
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (11) : 911 - 913
[9] Cole T., 1980, Journal of the Physical Society of Japan, V49, P959
[10] FINAL-STATE INTERACTION AND INTERSUBBAND SPECTROSCOPY IN SILICON INVERSION-LAYERS
DASSARMA, S
KALIA, RK
NAKAYAMA, M
QUINN, JJ
[J]. PHYSICAL REVIEW B, 1981, 24 (12) : 7181 - 7186

← 1 2 3 4 5 6 →