FINAL-STATE INTERACTION AND INTERSUBBAND SPECTROSCOPY IN SILICON INVERSION-LAYERS

被引：9

作者：

DASSARMA, S

KALIA, RK

NAKAYAMA, M

QUINN, JJ

机构：

[1] ARGONNE NATL LAB, ARGONNE, IL 60439 USA

[2] KYUSHU UNIV, FUKUOKA, JAPAN

[3] BROWN UNIV, PROVIDENCE, RI 02912 USA

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.24.7181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：7181 / 7186

页数：6

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