ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACE INVERSION-LAYERS AT FINITE TEMPERATURE - THE SI(100)-SIO2 SYSTEM

被引：35

作者：

DASSARMA, S ^{[1
]}

VINTER, B ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT PHYS & ASTRON,COLLEGE PK,MD 20742

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.26.960

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：960 / 974

页数：15

相关论文

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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1001 - 1009

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