EXCHANGE-CORRELATION EFFECTS IN SILICON (111) INVERSION-LAYERS - STRAIN-ENHANCED VALLEY-OCCUPANCY PHASE-TRANSITION

被引：11

作者：

BLOSS, WL

YING, SC

QUINN, JJ

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.23.1839

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1839 / 1842

页数：4

共 18 条

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[5]

BLOSS WL, UNPUBLISHED

[6] STRESS AND TEMPERATURE-DEPENDENCE OF SUBBAND STRUCTURE IN SILICON INVERSION LAYERS [J].

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[8]

ENGLERT T, UNPUBLISHED

[9] EXCHANGE AND CORRELATION IN ATOMS, MOLECULES, AND SOLIDS BY SPIN-DENSITY FUNCTIONAL FORMALISM [J].

GUNNARSSON, O ;

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PHYSICAL REVIEW B, 1976, 13 (10) :4274-4298

[10] A SIMPLIFIED TREATMENT OF EXCHANGE AND CORRELATION IN SEMICONDUCTING SURFACE INVERSION-LAYERS [J].

KALIA, RK ;

KAWAMOTO, G ;

QUINN, JJ ;

YING, SC .

SOLID STATE COMMUNICATIONS, 1980, 34 (06) :423-426

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