MANY-VALLEY INTERACTIONS IN N-TYPE SILICON INVERSION LAYERS

被引：40

作者：

DORDA, G

EISELE, I

GESCH, H

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.17.1785

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1785 / 1798

页数：14

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