PIEZORESISTANCE IN N-TYPE SILICON INVERSION LAYERS AT LOW-TEMPERATURES

[1] Burger R M, 1967, FUNDAMENTALS SILICON, V1

[2] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &

[3] ENERGY-LEVEL DIFFERENCES IN SURFACE QUANTIZATION MEASURED BY PIEZORESISTANCE EFFECT [J]. SOLID STATE COMMUNICATIONS, 1972, 11 (12) : 1625 - 1628

[4] PIEZORESISTANCE IN QUANTIZED CONDUCTION BANDS IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2053 - &

[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[6] SURFACE CHARGES INDUCED BY MECHANICAL STRESSES IN SILICON-SILICON OXIDE INTERFACE [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 639 - +

[7] LOW-TEMPERATURE STRAIN SENSITIVITY OF MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 147 - 154

[8] THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1958, 112 (01): : 136 - 140

[9] QUANTUM-LIMIT PIEZORESISTANCE OF N-TYPE INVERSION LAYERS OF SILICON AND GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 735 - &

[10] JOOS G, 1945, LEHRBUCH THEORETISCH

[1] Burger R M, 1967, FUNDAMENTALS SILICON, V1

[2] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &

[3] ENERGY-LEVEL DIFFERENCES IN SURFACE QUANTIZATION MEASURED BY PIEZORESISTANCE EFFECT [J]. SOLID STATE COMMUNICATIONS, 1972, 11 (12) : 1625 - 1628

[4] PIEZORESISTANCE IN QUANTIZED CONDUCTION BANDS IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2053 - &

[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[6] SURFACE CHARGES INDUCED BY MECHANICAL STRESSES IN SILICON-SILICON OXIDE INTERFACE [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 639 - +

[7] LOW-TEMPERATURE STRAIN SENSITIVITY OF MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (02) : 147 - 154

[8] THERMAL EXPANSION OF SOME CRYSTALS WITH THE DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1958, 112 (01): : 136 - 140

[9] QUANTUM-LIMIT PIEZORESISTANCE OF N-TYPE INVERSION LAYERS OF SILICON AND GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 735 - &

[10] JOOS G, 1945, LEHRBUCH THEORETISCH