LOW-TEMPERATURE STRAIN SENSITIVITY OF MOS-TRANSISTORS

被引：8

作者：

GAYDON, BG ^{[1
]}

机构：

[1] CENT ELECT RES LABS,LEATHERHEAD,SURREY,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 02期

关键词：

D O I：

10.1016/0038-1101(73)90024-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：147 / 154

页数：8

相关论文

共 16 条

[1] SIMPLE SYSTEM FOR TEMPERATURE CONTRO6 AND CYCLING IN RANGE 4 TO 300 DEGREES K
ANGELO, PM
PALMA, MU
VAIANA, GS
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (03) : 415 - &
[2] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS
COLMAN, D
BATE, RT
MIZE, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &
[3] PIEZORESISTANCE IN QUANTIZED CONDUCTION BANDS IN SILICON INVERSION LAYERS
DORDA, G
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2053 - &
[4] EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCE
DORDA, G
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (09) : 406 - &
[5] EFFECT OF STRAIN ON MOS TRANSISTORS
DOREY, AP
MADDERN, TS
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (03) : 185 - &
[6] GAYDON BG, 1971, THESIS ENGLAND
[7] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[8] JUND C, 1970, 4 ANN I PHYS PHYS SO
[9] MAEDA H, TO BE PUBLISHED
[10] STRAIN GAUGE CALIBRATION DEVICE FOR EXTREME TEMPERATURES
MCCLINTOCK, RM
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1959, 30 (08) : 715 - 718