EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCE

被引：19

作者：

DORDA, G

机构：

来源：

关键词：

D O I：

10.1063/1.1653455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：406 / &

共 7 条

[1] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS
COLMAN, D
BATE, RT
MIZE, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &
[2] DORDA G, 1970, OCT P INT C PHYS CHE
[3] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES
FOWLER, AB
FANG, FF
HOWARD, WE
STILES, PJ
[J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &
[4] FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331
[5] SCHRIEFFER JR, 1956, SEMICONDUCTOR SURFAC, P55
[6] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
SMITH, CS
[J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49
[7] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &