QUANTUM-LIMIT PIEZORESISTANCE OF N-TYPE INVERSION LAYERS OF SILICON AND GERMANIUM

被引：5

作者：

ITO, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 02期

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D O I：

10.1063/1.1661190

中图分类号：

O59 [应用物理学];

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页码：735 / &

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