EVIDENCE FOR MOBILITY DOMAINS IN (100) SILICON INVERSION LAYERS

被引：27

作者：

EISELE, I ^{[1
]}

GESCH, H ^{[1
]}

DORDA, G ^{[1
]}

机构：

[1] SIEMENS AG,FORSCH LAB,MUNCHEN,FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 20卷 / 07期

关键词：

D O I：

10.1016/0038-1098(76)90744-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：677 / 680

页数：4

共 13 条

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[4]

DORDA G, IN PRESS

[5] SURFACE QUANTUM OSCILLATIONS IN (100) INVERSION LAYERS UNDER UNIAXIAL STRESS [J].

EISELE, I ;

GESCH, H ;

DORDA, G .

SOLID STATE COMMUNICATIONS, 1976, 18 (06) :743-746

[6]

EISELE I, 1975, P INT C ELECTRONIC P

[7] EFFECTS OF HIGHER SUB-BAND OCCUPATION IN (100) SI INVERSION LAYERS [J].

HOWARD, WE ;

FANG, FF .

PHYSICAL REVIEW B, 1976, 13 (06) :2519-2523

[8]

KELLY MJ, TO BE PUBLISHED

[9] ELECTRON-ELECTRON INTERACTIONS CONTINUOUSLY VARIABLE IN RANGE 2.1 GREATER THAN RS GREATER THAN 0.9 [J].

SMITH, JL ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1972, 29 (02) :102-+

[10]

STALLHOFFER P, 1976, VERHANDL DPG 6, V11, P469

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